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1
Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures
Springer-Verlag Berlin Heidelberg
Dr. Morton B. Panish
,
Dr. Henryk Temkin (auth.)
growth
layer
temperature
surface
grown
phys
quantum
gaas
doping
current
sample
gainas
appl
layers
flux
electron
mbe
obtained
substrate
mombe
wells
lasers
structures
observed
shown
rate
range
collector
superlattice
lattice
thick
doped
equilibrium
carrier
emitter
hsmbe
epitaxy
panish
solid
galnas
discussed
thickness
devices
function
laser
bias
composition
measured
transistors
crystal
年:
1993
语言:
english
文件:
PDF, 13.83 MB
您的标签:
0
/
0
english, 1993
2
Organometallic Vapor-Phase Epitaxy: Theory and Practice
Academic Press
Gerald B. Stringfellow
growth
surface
omvpe
temperature
pyrolysis
gaas
rate
figure
temperatures
phys
solid
tmga
discussed
precursors
reactor
reactions
appl
crys
grown
layers
ash3
materials
electron
structures
layer
reaction
stringfellow
precursor
alloys
cryst
pressures
observed
ratio
tmin
molecules
composition
obtained
devices
ch3
effect
radicals
step
substrate
doping
reported
processes
partial
quantum
approximately
cbe
年:
1998
语言:
english
文件:
PDF, 26.03 MB
您的标签:
0
/
0
english, 1998
3
Organometallic vapor-phase epitaxy : theory and practice
Academic Press
G B Stringfellow
growth
surface
omvpe
temperature
pyrolysis
gaas
rate
figure
phys
temperatures
solid
tmga
discussed
precursors
reactor
reactions
appl
crys
grown
layers
ash3
materials
layer
reaction
structures
electron
stringfellow
alloys
precursor
cryst
observed
pressures
molecules
composition
devices
ch3
effect
radicals
ratio
step
obtained
substrate
tmin
doping
processes
reported
quantum
partial
approximately
mbe
年:
1999
语言:
english
文件:
PDF, 28.25 MB
您的标签:
0
/
0
english, 1999
4
Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS A
North Holland
J.P. Hirtz
,
C. Whitehouse
,
H.P. Meier
,
H.J. von Bardeleben and M.O. Manasreh (Eds.)
gaas
growth
grown
temperature
layer
layers
phys
quantum
surface
appl
optical
electron
samples
epitaxy
observed
structures
materials
laser
obtained
shown
defects
sample
density
thickness
substrate
lasers
wells
measurements
current
annealing
devices
mbe
shows
carrier
μτη
absorption
ingaas
barrier
lattice
vapour
doped
range
figure
spectra
measured
function
inas
strain
strained
device
年:
1993
语言:
english
文件:
PDF, 34.34 MB
您的标签:
2.0
/
0
english, 1993
5
III-V Semiconductor Materials and Devices
North-Holland
R.J. MALIK (Eds.)
growth
gaas
phys
electron
temperature
appl
layer
substrate
devices
surface
materials
layers
grown
crystal
implantation
shown
implanted
compounds
melt
rate
solid
semiconductor
device
diffusion
epitaxial
mobility
temperatures
carrier
semiconductors
mocvd
effect
annealing
beneking
doped
doping
lattice
crystals
gate
donnelly
cryst
structures
thermal
mbe
technology
formation
quantum
composition
current
reactor
thickness
年:
1989
语言:
english
文件:
PDF, 20.90 MB
您的标签:
0
/
0
english, 1989
6
1981年砷化稼及有关化合物会议论文集
中国金融学会半导体学术委员会
中国金融学会半导体学术委员会编
gaas
bda
arr
algaas
gads
rrr
mbe
rra
ingaasp
ovd
gaalas
heh
lpe
fre
galnas
mesfet
bbe
pbn
bes
galnasp
phys
aera
appl
brr
brs
frr
hra
rab
rah
rea
wah
abr
hmr
rhe
soc
x10
arg
bret
epd
fea
fef
gasb
tit
vpe
年:
1981
语言:
chinese
文件:
PDF, 33.33 MB
您的标签:
0
/
0
chinese, 1981
7
出国参观考察报告编号79015日本办导体材料研究情况
北京:科学技术文献出版社
中国科学技术情报研究所编
gaas
lpe
gaalas
rrr
rra
rea
arr
vpe
laser
mbe
prr
ark
rmr
phys
sih
appl
bes
bie
fre
gasb
sony
rams
rarer
rrm
aem
arie
frr
galnas
hrm
kerr
rhe
sra
abr
aera
amm
amr
asr
brt
eea
erma
esr
heh
hra
mre
prb
ray
sasaki
sbr
srr
substrate
年:
1979
语言:
chinese
文件:
PDF, 10.79 MB
您的标签:
0
/
0
chinese, 1979
8
半导体文摘 1985年度主题索引
北京:科学技术文献出版社;重庆分社
中国科学技术情报研究所重庆分所编辑
gaas
cds
cdte
gasb
ingaas
pbte
ingaasp
sih
gaalas
si0
culnse
pbs
pbse
si:h
zns
algaas
gaasp
inas
insb
snte
sow
ain
ascl
cdse
hgcdte
pbsete
gase
hgte
cdo
cdzns
sth
tasi
znse
aset
gete
hlf
inse
ptsi
rea
zno
a1,0
alinas
avs
bac
bree
cucr
fre
galnas
galnasp
gese
年:
1986
语言:
chinese
文件:
PDF, 7.12 MB
您的标签:
0
/
0
chinese, 1986
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